2001 (and backfills for previous years) / DB reference years
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Author Ehrlich-D; Silverman-S; Aucoin-R; Burns-M
Source Solid-State-Technology. v 44 n 6 June 2001, p 145-160
Abstract The process of laser induced etching of silicon by melting silicon in the presence of high pressure chlorine was reviewed. Two applications that have become possible due to emergence of fully engineered commercial laser microchemical (LMC) etching systems were also outlined. Laser direct-write microchemical processing combines high speed and precision. The reaction of chlorine on silicon occurs with order unity reaction efficiency. The reaction is a true interface reaction leading to controlled material removal without significant ablative component. (Edited abstract) 8 Refs. (Auth abstract) XX