Email: Mort@att.net
Born --- New York City, 1929
Education:
Brooklyn College and Denver University. BS in Chemistry 1950 Michigan State University --- M.S., Physical Chemistry, 1951, Thesis: Magnetic moments of some simple organic compounds Michigan State University Ph.D., Physical Chemistry, 1954, Thesis: Thermodynamic and physical properties of several interhalogen compounds.
Career:
1954 to 1957 Oak Ridge National Laboratory Investigated thermodynamic properties of molten salts. 1957 to 1964 Research and Advanced Development Division of AVCO Corporation, Wilmington Mass., thermodynamic studies of refractory materials at very high temperatures. In 1961, appointed Head of the Physical Chemistry Section - responsible primarily for studies in very high temperature chemistry.
1964 Member of the Technical Staff, Bell Lab's Materials Science Research Dept. Initially concerned primarily with elucidating phase equilibria in III-V systems, particularly III-V dopant systems as a precondition for understanding dopant incorporation during crystal growth and diffusion of impurity elements into III-V compounds. In the late 60's these efforts were expanded to include phase studies of crystalline solid solutions among III-V compounds, multilayer liquid phase epitaxy and optoelectronic studies of III-V binary and ternary compounds and the growth of multilayered structures for injection lasers. In 1969 with I. Hayashi - demonstrated that the GaAs-AlGaAs heterojunction could be used to reduce dramatically the room temperature threshold current density of injection lasers. In 1970 (also with Hayashi) presented the first complete experimental evidence for room temperature cw operation of an injection laser. This evidence included a demonstration of line narrowing of the spectra (at the time, a major criterion for demonstrating lasing).
With Hayashi recognized that the use of lattice matched heterojunctions to manage light and carriers provided new degrees of freedom in the design of devices and the possibility for research into the physics of small structures. To emphasize this we named the multilayer semiconductor structures "heterostructures", defined as structures containing one or more "ideal" junctions between two different semiconductors, to control light and/or carriers. An "ideal" junction was sufficiently lattice matched that crystalline defects were not introduced at the interface.
In subsequent years, with a number of collaborators, continued studies of III-V thermodynamics, crystal growth, and device properties of a variety of heterostructure lasers. In 1973 with H.C. Casey, demonstrated that light and carriers could be separately confined using heterostructures. In 1980 demonstrated that successful Molecular Beam Epitaxy (developed for elemental sources by A.Y. Cho) could be achieved with non-elemental sources. Subsequently, emphasized the application of such new beam epitaxy methods, generally called Gas Source (and sometimes Hydride Source) Molecular Beam Epitaxy, and a further modification called Metal Organic Molecular Beam Epitaxy (first shown by W.T. Tsang), to the growth of heterostructures in the GaInAs(P)/InP semiconductor system. During this period, demonstrated the first low threshold heterostructure lasers by beam epitaxy in the GaInAs(P)/InP system and the growth of the first quantum well and graded index lasers in that system.
During the 80's and up to 1992 the new epitaxy methods were applied to the study of a variety of heterostructures and heterostructure devices, including quantum well and multiquantum well structures for physics and device studies. The device categories studied included the earliest quantum well detectors (with H. T. Temkin), and the earliest demonstration that heterostructures could be used to fashion ultra-high-speed heterostructure bipolar transistors (with R. Nottenburg). During this period fundamental studies were also done on the properties of superlattices, with emphasis on defects, and intrinsic lattice strain at some heterostructure interfaces (with J. Vandenberg), and on the fundamentals of doping incorporation during beam epitaxy of several III-V systems.
1969- 1987 - Head, Materials Science Research Department This department was primarily concerned with the study of the physics and chemistry of III-V compounds and of III-V epitaxy for fundamental physics studies of heterostructures and for the development and study of optoelectronic and microwave devices utilizing heterostructures. Resigned this position in 1987 to return to full time research.
1987 - 1992 Distinguished Member of the Technical Staff, Materials Science Research Dept. Studies as described above. Retired in March 1992.
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