1999 / Solid Freeform Fabrication Proceedings
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Author S. Harrison, H. L. Marcus, The University of Connecticut at Storrs
Source Solid Freeform Fabrication Proceedings, 1999, pp 471-478
Abstract Silicon carbide deposited by the gas-phase Selective Area Laser Deposition (SALD) process underwent extensive structural analysis in this investigation. The silicon carbide material was locally formed from a gas precursor mixture of tetramethylsilane and hydrogen, at a deposition temperature of approximately 1100 deg C and maintained by a closed-loop laser control system. Ground powder samples of the SALD silicon carbide material were examined by Magic Angle Spinning -Nuclear Magnetic Resonance, X-ray Dfffraction and Transmission Electron Microscopy. The results from these analytical tools show a significant level of twinning in the SALD SiC material which explains the significant differences between the NMR and X-ray spectra. (Auth abstract) [References: 11]
Solid Freeform Fabrication Proceedings can be obtained from: The Solid Freeform Fabrication Symposium
or contact:
The University of Texas at Austin
Laboratory for Freeform Fabrication / Texas Materials Institute
Mechanical Engineering Dept.
c/o The Solid Freeform Fabrication Symposium
MC C2200
Austin, TX 78712-1063 USA
512-471-3026; 512-471-7681 FX; Email: sffsymp@uts.cc.utexas.edu