1995 / Solid Freeform Fabrication Proceedings
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Author Y.L. Lee (a), J.V. Thompkins (a), J.M. Sanchez (a), H.L. Marcus (b), (a) The University of Texas at Austin, (b) University of Connecticutt
Source Solid Freeform Fabrication Proceedings, 1995, pp 433-439
Abstract The deposition rates using pure tetramethylsilane (TMS) as precursor are calculated numerically for a rod grown by the Selected Area Laser Deposition process. In particular, the dependence of the kinetics of deposition on pressure of TMS is examined. The conditions for which volcano deposition profiles occur are also investigated. The results show that deposition rate increases with increasing pressure and then becomes saturated. In addition, adsorption-desorption phenomena, rather than effects of reactants depletion, are responsible for the volcano deposition profile observed experimentally. (Auth abstract) [References: 17]
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