2003 / Solid Freeform Fabrication Proceedings
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Author Jian Mi, Josh Gillespie, Ryan W. Johnson, Scott N. Bondi, and W. Jack Lackey Rapid Prototyping and Manufacturing Institute Woodruff School of Mechanical Engineering Georgia Institute of Technology Atlanta, GA 30332-0405
Source Solid Freeform Fabrication Proceedings, 2003, pp 510-523.
Abstract Silicon Carbide (SiC) has been grown from methyltrichlorosilane (MTS) and hydrogen using the Georgia Tech Laser Chemical Vapor Deposition (LCVD) system. A morphology study of LCVD-SiC fibers and lines was completed. Graphite and single crystal silicon were used as the substrates. In order to provide guidance to future growth of SiC, thermodynamic calculations for the C-H-Si-Cl system were performed using the SOLGASMIX-PV program. (Auth abstract) [References: 10] XX
Solid Freeform Fabrication Proceedings can be obtained from: The Solid Freeform Fabrication Symposium
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